Toshiba 32nm Toggle Mode NAND Flash Memory

Toshiba 32nm Toggle Mode NAND Flash Memory

Toshiba 32nm Toggle Mode NAND Flash Memory

Toshiba announced the 32nm double data rate Toggle Mode NAND flash memory. The new 32nm NAND is available in MLC version with 64Gb, 128Gb and 256Gb densities and single-level cell (SLC) versions with densities of 32Gb, 64Gb and 128Gb.

According to Toshiba, the new double data rate Toggle Mode 1.0 NAND has a fast interface rated at 133 megatransfers/second (MT/s), compared to 40MT/s for legacy SLC single data rate NAND. The DDR interface in Toggle Mode NAND uses a Bidirectional DQS to generate input/output signals (I/Os) using the rising and falling edge of the write erase signal. Toggle Mode NAND also has on-die termination to help achieve less crosstalk.

Models:

Toshiba 32nm Toggle Mode Specifications
Type Density Configuration Page/Block Size Package Vcc VccQ
SLC 32Gb (4GB)4 2st/2CE 8kB/1MB 132 BGA 2.7 – 3.6 1.8
3.3
64Gb (8GB) 4st/4CE 8kB/1MB 132 BGA 2.7 – 3.6 1.8
3.3
128Gb (16GB) 8st/4CE 8kB/1MB 132 BGA 2.7 – 3.6 1.8
3.3
MLC 64Gb (8GB) 2st/2CE 8kB/1MB 132 BGA 2.7 – 3.6 1.8
3.3
128Gb (16GB) 4st/4CE 8kB/1MB 132 BGA 2.7 – 3.6 1.8
3.3
256Gb (32GB) 8st/4CE 8kB/1MB 132 BGA 2.7 – 3.6 1.8
3.3
[toshiba]

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